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Found 1 publication records. Showing 1 according to the selection in the facets
Hits ?▲ |
Authors |
Title |
Venue |
Year |
Link |
Author keywords |
69 | G. Hari Rama Krishna, Amit K. Aditya, Nirmal B. Chakrabarti, Swapna Banerjee |
Analysis of temperature dependence of Si-Ge HBT. |
VLSI Design |
1995 |
DBLP DOI BibTeX RDF |
semiconductor materials, heterojunction bipolar transistors, Ge-Si alloys, heterojunction bipolar transistors, Ge mole-fraction, two dimensional device simulator, BISOF, current gain, graded HBT, 200 to 300 K, simulation, finite element method, finite element analysis, FEM, temperature dependence, SiGe, thermal analysis, semiconductor device models |
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